MJF31C* (NPN), MJF32C* (PNP)

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

_C/W

Thermal Resistance, Junction to Case

R

θJC

4.46

_C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

VCEO(sus)

100

–

Vdc

Collector Cutoff Current

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ICEO

–

0.3

mAdc

Collector Cutoff Current

ICES

–

200

µAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

–

1.0

mAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

hFE

25

10

–

50

–

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

VCE(sat)

–

1.2

Vdc

Base–Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

VBE(on)

–

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

fT

3.0

–

MHz

Small–Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

–

–

2. Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.