Power Transistors

1

Publication date: January 2003

SJD00100BED

2SC2590

Silicon NPN epitaxial planar type

For low-frequency power amplification

■ Features

• Excellent collector current I

• High transition frequency f

T

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

120

V

Emitter-base voltage (Collector open)

= 10 µA, I

C

= 05

V

1

2

90

220



65

100

Collector-emitter saturation voltage

= 300 mA, I

B

= 30 mA

1.0

V

Base-emitter saturation voltage

1.2

V

Transition frequency

200

MHz

Collector output capacitance

11

20

pF

(Common base, input open circuited)

Rank

Q

R

90 to 155

130 to 220

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

120

V

Collector-emitter voltage (Base open)

120

V

Emitter-base voltage (Collector open)

5V

Collector current

0.5

A

Peak collector current

1.0

A

Collector power dissipation

1.2

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

8.0

+0.5

–0.1

123