2SC5885 datasheet(1/3 Pages) PANASONIC

Part #	2SC5885

Description	Silicon NPN triple diffusion mesa type

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

Logo

1 / 3 page

Power Transistors

1

Publication date: March 2004

SJD00312AED

φ3.2±0.1

9.9±0.3

4.6±0.2

2.9±0.2

1.25±0.1

2.6±0.1

0.7±0.1

0.76±0.06

1.45±0.15

0.75±0.1

2.54±0.2

5.08±0.4

1.2±0.15

7

° 123

2SC5885

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor

I Features

• High breakdown voltage: V

CBO ≥ 1 500 V

• Wide safe operation area

• Built-in dumper diode

I Absolute Maximum Ratings T

C

= 25°C

I Electrical Characteristics T

C

= 25°C ± 3°C

Unit: mm

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Emitter-base voltage (Collector open)

VEBO

IE = 500 mA, IC = 05

V

Forward voltage

VF

IF

= 3 A

−2V

Collector-base cutoff current (Emitter open)

ICBO

VCB = 1 000 V, IE = 050

µA

VCB = 1 500 V, IE = 01

mA

Forward current transfer ratio

hFE

VCE

= 5 V, I

C

= 3 A

5

10



Collector-emitter saturation voltage

VCE(sat)

IC = 3 A, IB = 0.75 A

2.5

V

Base-emitter saturation voltage

VBE(sat)

IC = 3 A, IB = 0.75 A

1.5

V

Transition frequency

fT

VCE

= 10 V, I

C

= 0.1 A, f = 0.5 MHz

3

MHz

Storage time

tstg

IC = 3 A, Resistance loaded

5.0

µs

Fall time

tf

IB1 = 0.75 A, IB2 = −1.5 A

0.5

µs

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

1 500

V

Collector-emitter voltage (E-B short)

VCES

1 500

V

Emitter-base voltage (Collector open)

VEBO

5V

Base current

IB

3A

Collector current

IC

6A

Peak collector current *

ICP

9A

Collector power dissipation

PC

30

W

Ta

= 25°C2

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

1: Base

2: Collector

3: Emitter

TO-220H Package

Note) *: Non-repetitive peak collector current

Internal Connection

B

C

E

Marking Symbol: C5885

Similar Part No. - 2SC5885

Manufacturer	Part #	Datasheet	Description
Inchange Semiconductor ...	2SC5885	241Kb / 2P	isc Silicon NPN Power Transistor
Foshan Blue Rocket Elec...	2SC5885	843Kb / 6P	Silicon NPN transistor in a TO-220F Plastic Package.

More results

Similar Description - 2SC5885

Manufacturer	Part #	Datasheet	Description
Panasonic Semiconductor	2SC5884	75Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5904	78Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5902	78Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5909	78Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5686	75Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5412	37Kb / 2P	Silicon NPN triple diffusion mesa type
	2SC5912	78Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC6012	89Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5905	94Kb / 3P	Silicon NPN triple diffusion mesa type
	2SC5914	65Kb / 3P	Silicon NPN triple diffusion mesa type

More results

2SC5885 Datasheet(PDF) 1 Page - Panasonic Semiconductor

2SC5885 Datasheet(HTML) 1 Page - Panasonic Semiconductor

Similar Part No. - 2SC5885

Similar Description - 2SC5885

Html Pages

1 2 3

Datasheet Download

Link URL