Power Transistors

1

Publication date: September 2003

SJD00268AED

2SD2453

Silicon NPN triple diffusion planar type

For high current transfer ratio and power amplification

■ Features

• High forward current transfer ratio h

FE

• Low collector-emitter saturation voltage V

CE(sat)

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

80

V

Collector-emitter voltage (Base open)

60

V

Emitter-base voltage (Collector open)

6V

Collector current

2A

4A

Base current

1A

Collector power

10

W

dissipation

1

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

V

Collector-base cutoff current (Emitter open)

100

µA

Collector-emitter cutoff current (Base open)

= 40 V, I

B

= 0

100

µA

Emiter-base cutoff current (Collector open)

100

µA

500

2 500



Collector-emitter saturation voltage

= 2 A, I

B

= 0.05 A

1

V

Transition frequency

50

MHz

■ Electrical Characteristics T

(5.3)

(4.35)

(3.0)

123

Unit: mm

1: Base

2: Collector

3: Emitter

EIAJ: SC-63

U-G2 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

S

500 to 1 000

800 to 1 500

1 200 to 2 500

Note) Self-supported type package is also prepared.

Note) Non-repetitive peak collector current