30BQ040 datasheet(2/6 Pages) IRF

2 / 6 page

30BQ040

Bulletin PD-2.439 rev. G 07/04

www.irf.com

Parameters

30BQ Units Conditions

Max. Forward Voltage Drop

(1)

0.53

@ 3A

0.68

@ 6A

0.43

@ 3A

0.57

@ 6A

Max. Reverse Leakage Current (1)

0.5

TJ = 25 °C

TJ = 125 °C

Max. Junction Capacitance

230

R = 5VDC (test signal range 100KHz to 1Mhz) 25°C

Typical Series Inductance

3.0

Measured lead to lead 5mm from package body

dv/dt Max. Voltage Rate of Change

10000

V/µs (Rated V

Part number

30BQ040

Max. DC Reverse Voltage (V)

RWM Max. Working Peak Reverse Voltage (V)

Voltage Ratings

F(AV) Max. Average Forward Current

3.0

50% duty cycle @ T

L = 118 °C, rectangular wave form

4.0

50% duty cycle @ T

L= 110 °C, rectangular wave form

FSM

Max. Peak One Cycle Non-Repetitive

2000

5µs Sine or 3µs Rect. pulse

Surge Current

110

10ms Sine or 6ms Rect. pulse

Non Repetitive Avalanche Energy

6.0

J = 25 °C, IAS = 1.0A, L = 12mH

Repetitive Avalanche Current

1.0

Current decaying linearly to zero in 1 µsec

Frequency limited by T

J max. Va = 1.5 x Vr typical

Parameters

30BQ Units Conditions

Absolute Maximum Ratings

Following any rated

load condition and

with rated V

RRM applied

J = 25 °C

Electrical Specifications

(1) Pulse Width < 300µs, Duty Cycle < 2%

R = rated VR

J = 125 °C

Thermal-Mechanical Specifications

Max. Junction Temperature Range (*) - 55 to 150

°C

Tstg Max. Storage Temperature Range

- 55 to 150

°C

thJL Max. Thermal Resistance

°C/W DC operation

Junction to Lead

(**)

thJA Max. Thermal Resistance

°C/W DC operation

Junction to Ambient

Approximate Weight

0.24 (0.008) g (oz.)

Case Style

SMC

Similar to DO-214AB

Device Marking

IR3F

Parameters

30BQ

Units

Conditions

(**) Mounted 1 inch square PCB

thermal runaway condition for a diode on its own heatsink

(*) dPtot

dTj

Rth( j-a)

30BQ040 Datasheet(PDF) 2 Page - International Rectifier

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