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CSD15380F3 Datasheet(PDF) 1 Page - Texas Instruments

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Part # CSD15380F3
Description  CSD15380F3 20-V N-Channel FemtoFET??MOSFET
PDF  14 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

CSD15380F3 Datasheet(HTML) 1 Page - Texas Instruments

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0.64 mm
0.73 mm
0.35 mm
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD15380F3
SLPS579 – MAY 2016
CSD15380F3 20-V N-Channel FemtoFET™ MOSFET
1
1 Features
1
•
Ultra-Low CiSS and COSS
•
Ultra-Low Qg and Qgd
•
Ultra-Small Footprint
–
0.73 mm × 0.64 mm
•
Ultra-Low Profile
–
0.35-mm Max Height
•
Integrated ESD Protection Diode
–
Rated > 4-kV HBM
–
Rated > 2-kV CDM
•
Lead and Halogen Free
•
RoHS Compliant
2 Applications
•
Optimized for Load Switch Applications
•
Optimized for General Purpose Switching
Applications
•
Battery Applications
•
Handheld and Mobile Applications
3 Description
This
20-V,
990-m
Ω,
N-Channel
FemtoFET™
MOSFET is designed and optimized to minimize the
footprint in many handheld and mobile applications.
Ultra-low capacitance improves switching speeds.
When used in data line applications, the low
capacitance
minimizes
noise
coupling.
This
technology is capable of replacing standard small
signal
MOSFETs
while
providing
a
substantial
reduction in footprint size.
Text added for spacing
Text added for spacing
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
20
V
Qg
Gate Charge Total (4.5 V)
0.216
nC
Qgd
Gate Charge Gate-to-Drain
0.027
nC
RDS(on)
Drain-to-Source
On-Resistance
VGS = 2.5 V
2220
m
Ω
VGS = 4.5 V
1170
m
Ω
VGS = 8 V
990
m
Ω
VGS(th)
Threshold Voltage
1.1
V
Ordering Information(1)
Device
Qty
Media
Package
Ship
CSD15380F3
3000
7-Inch Reel
Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)
Tape
and
Reel
CSD15380F3T
250
7-Inch Reel
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated)
VALUE
UNIT
VDS
Drain-to-Source Voltage
20
V
VGS
Gate-to-Source Voltage
10
V
ID
Continuous Drain Current(1)
0.5
A
IDM
Pulsed Drain Current(2)
1.6
A
PD
Power Dissipation(1)
500
mW
V (ESD)
Human Body Model (HBM)
4
kV
Charged Device Model (CDM)
2
kV
TJ,
Tstg
Operating Junction and
Storage Temperature
–55 to 150
°C
(1) Typical
RθJA
=
255°C/W
on
1-in2
(6.45-cm2),
2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4
PCB.
(2) Pulse duration
≤ 100 μs, duty cycle ≤ 1%.
a
Typical Part Dimensions
Top View


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