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CSD15380F3 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD15380F3 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 14 page ![]() 0.64 mm 0.73 mm 0.35 mm D G S Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD15380F3 SLPS579 – MAY 2016 CSD15380F3 20-V N-Channel FemtoFET™ MOSFET 1 1 Features 1 • Ultra-Low CiSS and COSS • Ultra-Low Qg and Qgd • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 20-V, 990-m Ω, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Text added for spacing Text added for spacing Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 20 V Qg Gate Charge Total (4.5 V) 0.216 nC Qgd Gate Charge Gate-to-Drain 0.027 nC RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 2220 m Ω VGS = 4.5 V 1170 m Ω VGS = 8 V 990 m Ω VGS(th) Threshold Voltage 1.1 V Ordering Information(1) Device Qty Media Package Ship CSD15380F3 3000 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) Tape and Reel CSD15380F3T 250 7-Inch Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C (unless otherwise stated) VALUE UNIT VDS Drain-to-Source Voltage 20 V VGS Gate-to-Source Voltage 10 V ID Continuous Drain Current(1) 0.5 A IDM Pulsed Drain Current(2) 1.6 A PD Power Dissipation(1) 500 mW V (ESD) Human Body Model (HBM) 4 kV Charged Device Model (CDM) 2 kV TJ, Tstg Operating Junction and Storage Temperature –55 to 150 °C (1) Typical RθJA = 255°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB. (2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. a Typical Part Dimensions Top View |
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