IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYA8N90C3D1

IXYP8N90C3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

2.9

4.8

S

C

400

pF

C

oes

V

30

pF

C

res

7.8

pF

Q

g(on)

13.3

nC

Q

ge

I

3.4

nC

Q

gc

5.8

nC

t

d(on)

16

ns

t

ri

20

ns

E

on

0.46

mJ

t

d(off)

40

ns

t

fi

130

ns

E

0.18

0.50

mJ

t

d(on)

17

ns

t

ri

22

ns

E

on

1.00

mJ

t

d(off)

75

ns

t

fi

163

ns

E

off

0.22

mJ

R

thJC

1.2 °C/W

R

thCS

TO-220

0.50

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

Reverse Diode (FRED)

(T

Characteristic Value

Symbol

Test Conditions

Min.

Typ.

Max.

V

F

3.0

V

T

2.0

V

I

RM

7.5

A

t

rr

114

ns

R

thJC

2.5 °C/W

I

T

V

T

I

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

TO-263 Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

Pins: 1 - Gate

2 - Collector

3 - Emitter

TO-220 Outline