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SGA-7489 Datasheet(PDF) 1 Page - Stanford Microdevices |
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SGA-7489 Datasheet(HTML) 1 Page - Stanford Microdevices |
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1 / 8 page ![]() Product Description Preliminary 1 EDS-101801 Rev A Phone: (800) SMI-MMIC http://www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. SGA-7489 DC-3000 MHz Silicon Germanium HBT Cascadeable Gain Block Product Features DC-3000 MHz Operation Single Voltage Supply High Output Intercept: +36 dBm typ. at 850 MHz Low Noise Figure: 2.9 dB typ. at 850 MHz Applications OscillatorAmplifiers PAfor Low / Medium PowerApplications IF/ RF Buffer Amplifier Drivers for CATVAmplifiers LO Driver Amplifier Stanford Microdevices SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-7489 requires only DC blocking and bypass capacitors and a bias inductor for external components. Frequency performance may be extended using the 2 GHz application circuit shown on sheet 5. l o b m y S : s n o it i d n o C t s e T : s r e t e m a r a P Z 0 I , s m h O 0 5 = D 5 2 = T , A m 0 3 1 = o C s ti n U . n i M . p y T . x a M s e t o N P B d 1 n o i s s e r p m o C B d 1 t a r e w o P t u p t u O z H M 0 0 1 = f z H M 0 0 5 = f z H M 0 5 8 = f * z H M 0 5 9 1 = f m B d m B d m B d m B d 8 . 2 2 6 . 2 2 4 . 2 2 * 3 . 0 2 g n i s U * z H G 2 .t k C . p p A ) 5 t e e h s ( P I 3 t n i o P t p e c r e t n I r e d r O d ri h T m B d 0 = e n o t r e p t u o r e w o P z H M 0 0 1 = f z H M 0 0 5 = f z H M 0 5 8 = f * z H M 0 5 9 1 = f m B d m B d m B d m B d 6 . 8 3 2 . 7 3 0 . 6 3 * 7 . 5 3 g n i s U * z H G 2 .t k C . p p A ) 5 t e e h s ( S 1 2 n i a G l a n g i S ll a m S z H M 0 0 1 = f z H M 0 0 5 = f z H M 0 5 8 = f * z H M 0 5 9 1 = f B d B d B d B d 7 . 3 2 0 . 3 2 0 . 2 2 * 3 . 8 1 g n i s U * z H G 2 .t k C . p p A ) 5 t e e h s ( h t d i w d n a BS y b d e n i m r e t e D ( 1 1 S , 2 2 ) s e u l a Vz H M0 0 0 3 S 1 1 s s o L n r u t e R t u p n Iz H M 0 0 0 3 - C D = fB d8 . 1 1 S 2 2 s s o L n r u t e R t u p t u Oz H M 0 0 0 3 - C D = fB d3 . 9 S 2 1 n o it a l o s I e s r e v e R z H M 0 0 1 = f z H M 0 0 5 = f z H M 0 5 8 = f * z H M 0 5 9 1 = f B d B d B d B d 8 . 5 2 8 . 5 2 4 . 5 2 * 7 . 2 2 g n i s U * z H G 2 .t k C . p p A ) 5 t e e h s ( F NZ , e r u g i F e s i o N S s m h O 0 5 =z H M 0 5 8 = fB d9 . 2 V D e g a tl o V e c i v e D V0 . 5 l- j, h t R) d a e l - n o it c n u j( e c n a t s i s e R l a m r e h T o W / C2 8 S21 vs. Frequency, T=+25C, Id=130 mA 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 Frequency (MHz) |
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