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DMP6180SK3 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP6180SK3 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMP6180SK3 Document number: DS36172 Rev. 3 - 2 2 of 6 www.diodes.com July 2013 © Diodes Incorporated DMP6180SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = -10V Steady State TC = +25°C TC = +100°C ID -14 -10 A Maximum Body Diode Forward Current (Note 6) IS 4.1 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 25 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 1.7 W TA = +70°C 1.0 Thermal Resistance, Junction to Ambient (Note 5) Steady state RJA 76 °C/W t<10s 33 Total Power Dissipation (Note 6) TA = +25°C PD 2.7 W TA = +70°C 1.5 Thermal Resistance, Junction to Ambient (Note 6) Steady state RJA 50 °C/W t<10s 24 Total Power Dissipation (Note 6) TC = +25°C PD 40 W TC = +100°C 16 Thermal Resistance, Junction to Case (Note 6) Steady state RJC 3.1 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS -1 µA VDS = -48V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -1.2 -2.7 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) 60 110 m Ω VGS = -10V, ID = -12A 80 140 VGS = -4.5V, ID =-8A Forward Transfer Admittance |Yfs| 15 S VDS = -5V, ID = -12A Diode Forward Voltage VSD -0.7 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 984.7 pF VDS = -30V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 58 Reverse Transfer Capacitance Crss 45.5 Gate Resistance RG 12.9 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = -4.5V) Qg 8.1 nC VDS = -30V, ID = -12A Total Gate Charge (VGS = -10V) Qg 17.1 Gate-Source Charge Qgs 3.2 Gate-Drain Charge Qgd 3.9 Turn-On Delay Time tD(on) 5.9 ns VGS = -10V, VDS = -30V, RGEN = 3Ω, RL = 2.5Ω Turn-On Rise Time tr 21.2 Turn-Off Delay Time tD(off) 30.9 Turn-Off Fall Time tf 39.1 Body Diode Reverse Recovery Time trr 19.9 ns IS = -12A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr 1.7 nC IS = -12A, dI/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing |
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