VT8501 datasheet(9/17 Pages) ETC

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VT8501 Apollo MVP4

Revision 1.3 February 1, 2000

-3-

Features

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• High-Performance DRAM Controller

− 64-bit DRAM interface synchronous with host CPU (66//100 MHz) or internal Memory Clock (100 MHz)

− Concurrent CPU and AGP access

− Supports both standard PC100 and “Virtual Channel” PC100 SDRAMs as well as FPG and EDO DRAMs

− Different DRAM types (FPG, EDO, and SDRAM) may be used in mixed combinations

− Different DRAM timing for each bank

− Dynamic Clock Enable (CKE) control for SDRAM power reduction

− Mixed 1M / 2M / 4M / 8M / 16MxN DRAMs

− 6 banks up to 768MB DRAMs

− Flexible row and column addresses

− 64-bit data width only

− 3.3V DRAM interface

− Programmable I/O drive capability for MA, command, and MD signals

− Optional bank-by-bank ECC (single-bit error correction and multi-bit error detection) or EC (error checking only)

for DRAM integrity

− Two-bank interleaving for 16Mbit SDRAM support

− Two-bank and four bank interleaving for 64Mbit SDRAM support

− Supports maximum 8-bank interleave (i.e., 8 pages open simultaneously); banks are allocated based on LRU

− Seamless DRAM command scheduling for maximum DRAM bus utilization (e.g., precharge other banks while

accessing the current bank)

− Four cache lines (16 quadwords) of CPU/cache to DRAM write buffers

− Four quadwords of CPU/cache to DRAM read prefetch buffers

− Concurrent DRAM writeback

− Read around write capability for non-stalled CPU read

− Burst read and write operation

− 5-2-2-2-2-2-2-2 back-to-back accesses for EDO DRAM

− 6-1-1-1-2-1-1-1 back-to-back accesses for SDRAM

− BIOS shadow at 16KB increment

− Decoupled and burst DRAM refresh with staggered RAS timing

− Programmable refresh rate and refresh on populated banks only

− CAS before RAS or self refresh

• Sophisticated Power Management Features

− Independent clock stop controls for CPU / SDRAM, Internal AGP and PCI bus

− PCI and AGP bus clock run and clock generator control

− Suspend power plane preserves memory data

− Suspend-to-DRAM and Self-Refresh operation

− Dynamic clock gating for internal functional blocks for power reduction during normal operation

− Low-leakage I/O pads

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