DMT5015LFDF datasheet(4/6 Pages) DIODES

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DMT5015LFDF

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

0.6

0.8

1.2

1.4

1.6

1.8

-50

-25

100

125

150

I = 1mA

I = 250µA

, SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

T = 150°C

0.3

0.6

0.9

1.2

1.5

T = 125°C

T = 25°C

T = -55°C

T = 85°C

, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Drain-Source Leakage Current vs. Voltage

0.1

100

1000

10000

100000

T = 25°C

T = 85°C

T = 125°C

T = 150°C

, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

100

1000

10000

iss

Coss

rss

f = 1MHz

(nC)

g, TOTAL GATE CHARGE

Figure 11 Gate Charge

= 25V

I =A

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

Limited

DS(on)

= 10s

= 1s

= 100ms

= 10ms

= 1ms

= 150°C

T = 25°C

= 10V

Single Pulse

J(max)

DUT on 1 * MRP Board

= 100µs

0.001

0.01

0.1

100

0.01

0.1

100

DMT5015LFDF

Datasheet number: DS37202 Rev. 4 - 2

4 of 6

www.diodes.com

September 2014

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