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LPC2104 Datasheet(PDF) 23 Page - NXP Semiconductors

Part # LPC2104
Description  Single-chip 32-bit microcontrollers; 128 kB ISP/IAP Flash with 64 kB/32 kB/16 kB RAM
PDF  32 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LPC2104 Datasheet(HTML) 23 Page - NXP Semiconductors

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Philips Semiconductors
LPC2104/2105/2106
Single-chip 32-bit microcontrollers
Product data
Rev. 04 — 05 February 2004
23 of 32
9397 750 12792
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7.
Limiting values
[1]
The following applies to the Limiting values:
a) Stresses above those listed under Limiting values may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any conditions other
than those described in Section 8 “Static characteristics” and Section 9 “Dynamic characteristics”
of this specification is not implied.
b) This product includes circuitry specifically designed for the protection of its internal devices from
the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional
precautions be taken to avoid applying greater than the rated maximum.
c) Parameters are valid over operating temperature range unless otherwise specified. All voltages
are with respect to VSS unless otherwise noted.
[2]
Not to exceed 4.6 V.
[3]
Including voltage on outputs in 3-state mode.
[4]
Only valid when the VDD3 supply voltage is present.
[5]
The peak current is limited to 25 times the corresponding maximum current.
[6]
Dependent on package type.
Table 8:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDD1.8
Supply voltage, internal rail
−0.5
+2.5
V
VDD3
Supply voltage, external rail
−0.5
+3.6
V
Vi
DC input voltage, 5 V tolerant I/O
pins[3][4]
−0.5
6.0
V
Vi
DC input voltage, other I/O pins[2][3]
−0.5
VDD3 +
0.5
V
I
DC supply current per supply pin[5]
-
100
mA
I
DC ground current per ground pin[5]
-
100
mA
Tstg
Storage temperature[6]
−40
125
°C
P
Power dissipation (based on
package heat transfer, not device
power consumption)
1.5
-
W



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