LM79M05, LM79M12, LM79M15

SNOS553D – MAY 1998 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

Input Voltage

−25V

−35V

Input/Output Differential

25V

30V

Internally Limited

Operating Junction

Temperature Range

0°C to +125°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature

(Soldering, 10 sec.)

230°C

ESD Susceptibility

TBD

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test

conditions, see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

Refer to Typical Performance Characteristics and Design Considerations for details.

Electrical Characteristics LM79M05C

Part Number

LM79M05C

Output Voltage

−5V

Units

Input Voltage (Unless Otherwise Specified)

−10V

Symbol

Parameter

Conditions

Min

Typ

Max

Output Voltage

−4.8

−5.0

−5.2

V

5mA

−4.75

−5.25

V

(

Line Regulation

(1)

8

50

mV

(

2

30

mV

(

Load Regulation

(1)

30

100

mV

5mA

Quiescent Current

1

2

mA

Quiescent Current

With Input Voltage

0.4

mA

Change

(

With Load,

5mA

0.4

mA

Output Noise Voltage

150

μV

10Hz

≤ f ≤ 100Hz

Ripple Rejection

f = 120Hz

54

66

dB

(

Dropout Voltage

1.1

V

Peak Output Current

800

mA

Average Temperature

Coefficient of Output Voltage

0°C

−0.4

mV/°C

(1)

Regulation is measured at a constant junction temperature by pulse testing with a low duty cycle. Changes in output voltage due to

heating effects must be taken into account.

2

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