LS350-2 datasheet(1/2 Pages) LINEAR

Part #	LS350-2

Description	MONOLITHIC DUAL PNP TRANSISTORS

PDF	2 Pages

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Manufacturer	LINEAR [Linear Integrated Systems]

Direct Link	http://www.linearsystems.com

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Linear Integrated Systems

Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261

1

7

35

BOTTOM VIEW

2

6

ELECTRICAL CHARACTERISTICS @ 25

°C (unless otherwise noted)

SYMBOL

CHARACTERISTICS

LS350

LS351

LS352

UNITS

CONDITIONS

BV

CBO

Collector to Base Voltage

25

45

60

MIN.

V

I

C

= 10

µAI

E

= 0

BV

CEO

Collector to Emitter Voltage

25

45

60

MIN.

V

I

C

= 10

µAI

B

= 0

BV

EBO

Emitter to Base Voltage

6.2

MIN.

V

I

E

= 10

µA

I

C

= 0

NOTE 2

BV

CCO

Collector to Collector Voltage

30

60

100

MIN.

V

I

C

= 10

µAI

E

= 0

h

FE

DC Current Gain

100

150

200

MIN.

I

C

= 10

µAV

CE

= 5V

600

MAX.

h

FE

DC Current Gain

100

150

200

MIN.

I

C

= 100

µAV

CE

= 5V

600

MAX.

h

FE

DC Current Gain

100

150

200

MIN.

I

C

= 1mA,

V

CE

= 5V

V

CE

(SAT)

Collector Saturation Voltage

0.5

MAX.

V

I

C

= 1mA

I

B

= 0.1mA

I

CBO

Collector Cutoff Current

0.2

MAX.

nA

I

E

= 0

V

CB

= NOTE 3

I

EBO

Emitter Cutoff Current

0.2

MAX.

nA

I

C

= 0

V

EB

=3V

C

OBO

Output Capacitance

2

MAX.

pF

I

E

= 0

V

CB

= 5V

C

C1C2

Collector to Collector Capacitance

2

MAX.

pF

V

CC

= 0

I

C1C2

Collector to Collector Leakage Current

0.5

MAX.

nA

V

CC

= NOTE4

f

T

Current Gain Bandwidth Product

200

MIN.

MHz

I

C

= 1mA

V

CE

= 5V

NF

Narrow Band Noise Figure

3

MAX.

dB

I

C

= 100

µAV

CE

= 5V

BW = 200Hz

R

G

= 10 K

Ω

f = 1KHz

B1

E1

E2

B2

C1

C2

26 X 29 MILS

E1

E2

C1

C2

B1

B2

LS350 LS351 LS352

MONOLITHIC DUAL

PNP

TRANSISTORS

FEATURES

HIGH GAIN

h

FE ≥

200 @ 10

µA - 1mA

TIGHT V

BE

MATCHING

|V

BE1

-V

BE2

| = 0.2mV TYP.

HIGH f

T

275MHz TYP. @ 1mA

ABSOLUTE MAXIMUM RATINGS NOTE 1

@ 25

°C (unless otherwise noted)

I

C

Collector Current

10mA

Maximum Temperatures

Storage Temperature

-65

° to +200°C

Operating Junction Temperature

+150

°C

Maximum Power Dissipation

ONE SIDE

BOTH SIDES

Device Dissipation @ Free Air

250mW

500mW

Linear Derating Factor

2.3mW/

°C

4.3mW/

°C

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