LLDB3 datasheet(1/2 Pages) DSK

Part #	LLDB3

Description	SILICON BIDIRECTIONAL DIACS

PDF	2 Pages

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Manufacturer	DSK [Diode Semiconductor Korea]

Direct Link	http://www.diode.kr/

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FEATURES

ABSOLUTE RATINGS

Power dissipation on printed

TA=50

oC circuit (L=10mm)

Pc

mW

Repetitive peak on-state

tp=20

S

current

f=120Hz

ITRM

A

Operating junction temperature

TJ

oC

Storage temperature

TSTG

oC

Min

28

35

Typ

32

40

Max

36

45

Output voltage (NOTE 1)

Vo

Min

V

Breakover current (NOTE 1)

IBO

Max

A

Rise time (NOTE 1)

tr

Typ

S

Leakage current (NOTE 1)

IR

Max

A

2. Connected in parallel w ith the devices

NOTE: 1. Electrical characteristics applicable in both forw ard and reverse dirctions.

5.0

100.0

1.5

V

R=0.5 VBO

See FIG.1

10.0

C=22nf(NOTE 2)

Breakover voltage (NOTE 1)

Breakover voltage symmetry

Dynamic breakover voltage (NOTE 1)

VBO

UNITS

150.0

I+VBO I-

I-VBOI

I±

VI

C=22nf(NOTE 2)

See FIG.1

I=(IBO to IF=10mA)

See FIG.1

V

±3.0

V

Parameters

Symbols

UNITS

LLDB3,LLDB4

VOLTAGE RANGE: 28-45 V

SILICON BIDIRECTIONAL DIACS

The three layer,two termnal,axial lead,hermetically

1111sealed diacs are designed specifically for triggering

1111thyristors.They demonstrate low breakover current at

1111breakover voltage as they withstand peak pulse

1111current,The breakover symmetry is within three

1111volts(LLDB3,LLDB4). These diacs are intended for use in

CCC

thyrisitors phase control,circuits for lamp dimming,

FFFI universal motor speed control,and heat control.

Parameters

See FIG.3

2.0

-40--- +125

C=22nf(NOTE 2)

See FIG.1

ELECTRICAL CHARACTERISTICS

Test Conditions

-40--- +125

LLDB3

LLDB4

See FIG.2

Max

Min

Diode Semiconductor Korea

www.diode.kr

3.4

+0.3

-0.1

0.4±0.1

Cathode indification

MINI-MELF

Dimensions in millimeters

LLDB3.LLDB4

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