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GL41B Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # GL41B
Description  SURFACE MOUNT RECTIFIERS
PDF  2 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

GL41B Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  GL41B Datasheet HTML 1Page - Diode Semiconductor Korea GL41B Datasheet HTML 2Page - Diode Semiconductor Korea  
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SOLDERABLE ENDS
D2
D2=D1
+0
-0.20
0.5± 0.1
0.5± 0.1
4.9± 0.2
FEATURES
◇
Plastic package has underwriters laboratories
flammability classification 94V-0
◇
Glass passivated chip junction
◇
For surface mount applications
◇
High temperature metallurgically bonded construction
MECHANICAL DATA
◇
Case: JEDEC DO-213AB,molded plastic
◇
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
◇
Polarity: Color band denotes cathode
◇
Weight: 0.0046 ounces, 0.116 grams
◇
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
GL
41B
GL
41D
GL
41G
GL
41J
GL
41K
GL
41M
GL
41T
GL
41Y
UNITS
Maximum recurrent peak reverse voltage
100 200 400 600 800 1000 1300 1600
V
Maximum RMS voltage
70
140 280 420 560 700 910 1120
V
Maximum DC blocking voltage
100 200 400 600 800 1000 1300 1600
V
Maximum average forward rectified current
(see FIG.1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage
@1.0A
V
Maximum reverse current
@TA=25℃
at rated DC blocking voltage @TA=125℃
Typical junction capacitance (Note1)
pF
Typical thermal resistance (Note 2)
℃
/W
Operating junction temperature range
℃
Storage temperature range
℃
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal.
50
8.0
75
- 55 ---- +175
- 55 ---- +175
1.0
30
1.2
10
GL41A---GL41
Y
◇
High temperature soldering guaranteed:450 ℃/5
DO - 213AB
1.1
VOLTAGE RANGE
: 50 --- 1000 V
CURRENT: 1.0 A
seconds at terminals.Complete device sub-mersible
◇
Cavity-free glass passivated junction
SURFACE MOUNT
RECTIFIER
S
temperature of 265℃ for 10 seconds in solder bath
Cj
Tj
TSTG
RθJA
VRRM
VRMS
GL
41A
50
50
35
VDC
A
µA
I(AV)
IFSM
A
VF
IR
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr


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