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GL41B Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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GL41B Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() SOLDERABLE ENDS D2 D2=D1 +0 -0.20 0.5± 0.1 0.5± 0.1 4.9± 0.2 FEATURES ◇ Plastic package has underwriters laboratories flammability classification 94V-0 ◇ Glass passivated chip junction ◇ For surface mount applications ◇ High temperature metallurgically bonded construction MECHANICAL DATA ◇ Case: JEDEC DO-213AB,molded plastic ◇ Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 ◇ Polarity: Color band denotes cathode ◇ Weight: 0.0046 ounces, 0.116 grams ◇ Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%. GL 41B GL 41D GL 41G GL 41J GL 41K GL 41M GL 41T GL 41Y UNITS Maximum recurrent peak reverse voltage 100 200 400 600 800 1000 1300 1600 V Maximum RMS voltage 70 140 280 420 560 700 910 1120 V Maximum DC blocking voltage 100 200 400 600 800 1000 1300 1600 V Maximum average forward rectified current (see FIG.1) Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage @1.0A V Maximum reverse current @TA=25℃ at rated DC blocking voltage @TA=125℃ Typical junction capacitance (Note1) pF Typical thermal resistance (Note 2) ℃ /W Operating junction temperature range ℃ Storage temperature range ℃ NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal. 50 8.0 75 - 55 ---- +175 - 55 ---- +175 1.0 30 1.2 10 GL41A---GL41 Y ◇ High temperature soldering guaranteed:450 ℃/5 DO - 213AB 1.1 VOLTAGE RANGE : 50 --- 1000 V CURRENT: 1.0 A seconds at terminals.Complete device sub-mersible ◇ Cavity-free glass passivated junction SURFACE MOUNT RECTIFIER S temperature of 265℃ for 10 seconds in solder bath Cj Tj TSTG RθJA VRRM VRMS GL 41A 50 50 35 VDC A µA I(AV) IFSM A VF IR Dimensions in millimeters Diode Semiconductor Korea www.diode.kr |
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