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GL34M Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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GL34M Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() SOLDERABLE ENDS D2 D2=D1 +0 -0.20 0.5± 0.1 0.5± 0.1 3.5± 0.2 FEATURES MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified GL34D GL34G GL34J GL34K GL34M Gray Red Orange Yellow Green Blue Violet Maximumrecurrent peak reverse voltage VRRM 200 400 600 800 1000 V MaximumRMS voltage VRWS 140 280 420 560 700 V MaximumDC blocking voltage VDC 200 400 600 800 1000 V Maximumaverage forw ord rectified current V @TL=75 IF(AV) A Peak forw ard surge current V 8.3ms single half-sine-w ave superimposed V on rated load (JEDEC Method) IFSM A Maximuminstantaneous forw ard voltage at 0.5 A VF V MaximumDC reverse current @T A=25 oC at rated DC blockjing voltage @T A=125 oC Typical junction capacitance(NOTE2) CJ pF Storage temperature range TSTG oC Plastic package has underwriters laboratory 111 flammability classifications UNITS 10.0 50 100 35 70 50 100 50.0 1.2 1.3 2.Thermal resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas -55--------+150 0.5 IR 5.0 For surface mounted applications Low profile package GL34A Polarity: Color band denotes cathode end Weight: 0.0014 ounces, 0.036 gram Terminals:Solder Plated, solderable per MIL-STD- 1111750, Method 2026 Glass passivated chip junction High temperature soldering: 111 250 oC/10 seconds at terminals GL34A---GL34M NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts 4.0 REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-213AA,molded plastic over 1111passivated chip Polarity color bands (2nd Band) SURFACE MOUNT RECTIFIERS DO - 213AA Typical thermal resitance (NOTE4) oC/W GL34B 4. Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Dimensions in millimeters JA R 150 Typical reverse recovery time(NOTE3) t 3.Measured with IF=0.5A,IR=1.0A,Irr=0.25A. rr 1.5 S A Operating junction temperature range T J -55--------+150 Diode Semiconductor Korea www.diode.kr |
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