PSS9014C datasheet(3/7 Pages) PHILIPS

3 / 7 page

2004 Aug 10

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

PSS9014C

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

in free air; note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB =30V; IE =0

−−

VCB =30V; IE = 0; Tamb = 150 °C −−

µA

ICEO

collector-emitter cut-off current

VCE =30V; IB =0

−−

100

IEBO

emitter-base cut-off current

VEB =5V; IC =0

−−

100

hFE

DC current gain

IC = 1 mA; VCE = 5 V

200

300

600

IC = 2 mA; VCE = 5 V

200

300

450

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 5 mA; note 1

−

200

300

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB = 0.5 mA; note 1

−

815

850

VBEon

base-emitter turn-on voltage

IC = 2 mA; VCE = 5 V

580

650

700

transition frequency

IC = 50 mA; VCE =10V;

f = 100 MHz

100

220

−

MHz

collector capacitance

VCB =10V; IE =ie = 0; f = 1 MHz

−

1.6

1.75

noise ﬁgure

VCE =5V; IC = 0.2 mA;

RS =2kΩ; f = 1 kHz; B = 200 Hz

−−

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