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MMSD301 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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MMSD301 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page  Schottky Barrier Diode MMSD301/MMSD701 Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Breakdown Voltage MMSD301 MMSD701 V(BR)R IR=10μA 30 70 V Forward voltage MMSD301 MMSD701 VF IF=1.0mA IF=10mA IF=1.0mA IF=10mA 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 V Reverse current MMSD301 MMSD701 IR VR=25V VR=35V 13 9.0 200 200 nA nA Diode Capacitance MMSD301 MMSD701 Cd VR=0V,f=1MHz 0.9 0.5 1.5 1.0 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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