74HC2G08DP datasheet(7/16 Pages) PHILIPS

7 / 16 page

2003 Oct 22

Philips Semiconductors

Product speciﬁcation

Dual 2-input AND gate

74HC2G08; 74HCT2G08

Note

1. All typical values are measured at Tamb =25 °C.

Tamb = −40 to +125 °C

VIH

HIGH-level input voltage

2.0

1.5

−−

4.5

3.15

−−

6.0

4.2

−−

VIL

LOW-level input voltage

2.0

−−

0.5

4.5

−−

1.35

6.0

−−

1.8

VOH

HIGH-level output voltage

VI =VIH or VIL

IO = −20 µA

2.0

1.9

−−

IO = −20 µA

4.5

4.4

−−

IO = −20 µA

6.0

5.9

−−

IO = −4.0 mA

4.5

3.7

−−

IO = −5.2 mA

6.0

5.2

−−

VOL

LOW-level output voltage

VI =VIH or VIL

IO =20 µA

2.0

−−

0.1

IO =20 µA

4.5

−−

0.1

IO =20 µA

6.0

−−

0.1

IO = 4.0 mA

4.5

−−

0.4

IO = 5.2 mA

6.0

−−

0.4

ILI

input leakage current

VI =VCC or GND

6.0

−−±1.0

µA

ICC

quiescent supply current

VI =VCC or GND; IO = 0

6.0

−−

µA

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

OTHER

VCC (V)

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