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MCP1700T-2502E/MB Datasheet(PDF) 4 Page - Microchip Technology

Part # MCP1700T-2502E/MB
Description  Low Quiescent Current LDO
PDF  28 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1700T-2502E/MB Datasheet(HTML) 4 Page - Microchip Technology

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MCP1700
DS20001826C-page 4
 2005-2013 Microchip Technology Inc.
Output Noise
eN
—3
—
µV/(Hz)1/2
IL = 100 mA, f = 1 kHz, COUT =1 µF
Power Supply
Ripple Rejection
Ratio
PSRR
—
44
—
dB
f = 100 Hz, COUT =1 µF, IL =50 mA,
VINAC = 100 mV pk-pk, CIN =0 µF,
VR =1.2V
Thermal
Shutdown
Protection
TSD
—
140
—
°C
VIN =VR +1V, IL = 100 µA
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN =VR +1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TJ
-40
+125
°C
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistance
Thermal Resistance, 2x2 DFN
JA
—91—
°C/W
EIA/JEDEC® JESD51-7
FR-4 0.063 4-Layer Board
JC
—19—
°C/W
Thermal Resistance, SOT-23
JA
—
336
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JC
—110
—
°C/W
Thermal Resistance, SOT-89
JA
—
180
—
°C/W
EIA/JEDEC JESD51-7
FR-4 0.063 4-Layer Board
JC
—52—
°C/W
Thermal Resistance, TO-92
JA
—
160
—
°C/W
JC
—
66.3
—
°C/W
Note 1:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN =VR +1V, ILOAD = 100 µA,
COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Note
1:
The minimum VIN must meet two conditions: VIN  2.3V and VIN  VR +3.0% VDROPOUT.
2:
VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
input voltage VIN =VR + 1.0V; IOUT = 100 µA.
3:
TCVOUT =(VOUT-HIGH -VOUT-LOW) *10
6 / (V
R * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4:
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
6:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7:
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.



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