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General Purpose Transistors

NPN Silicon

Features

As complementary type, the PNP transistor BC856A is

recommended.

Capable of 225mW power dissipation.

Lead-free parts for green partner, exceeds environmental

standards of MIL-STD-19500 /228

•

•

• Epitaxial plana chip construction

• Ideal for medium power application and switching

•

•

•

•

Moisture Sensitivity Level: 1

ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V

Suffix "-H" indicates Halogen-free part, ex.BC846A-H.

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Total device dissipation FR-5 board

(1)

Storage temperature range

Operating junction temperature range

Rating

Symbol

V

CBO

V

CEO

V

EBO

P

D

T

J

T

STG

Value

-55

-55

80

65

6.0

+150

+150

UNIT

Vdc

Vdc

Vdc

mW

o

A

Junction to ambient

R

θJA

556

Thermal resistance

225

1.8

O

T = 25 C

A

O

Derate above 25 C

Formosa MS

O

mW/ C

1.FR-5 = 1.0 x 0.75 x0.062 in.

2. Aluminum=0.4 x 0.3 x 0.024 in., 99.5% aluminum

BC846

BC847, BC850

BC848, BC849

50

30

45

30

6.0

5.0

Document ID

Issued Date

Revised Date

Revision

Page.

Mechanical data

Epoxy:UL94-V0 rated flame retardant

MIL-STD-750, Method 2026

•

BC846

BC847, BC850

BC848, BC849

BC846

BC847, BC850

BC848, BC849

Total device dissipation Aluminum

substrate(2)

P

D

mW

Junction to ambient

R

JA

θ

417

Thermal resistance

300

2.4

O

T = 25 C

A

O

Derate above 25 C

O

mW/ C

Package outline

PARAMETER

Symbol

MIN.

TYP.

MAX.

UNIT

Thermal Characteristics

Collector current-Continuous

I

C

100

mAdc

Rating

SOT-23

Dimensions in inches and (millimeters)

0.035 (0.89)

0.051 (1.30)

0.063 (1.60)

0.047 (1.20)

0.108 (2.75)

0.083 (2.10)

0.027 (0.67)

0.013 (0.32)

(A)

(B)

(C)

BC846A/B-BC847A/B/C

BC849B/C-BC850B/C

BC848A/B/C-

DS-231154

2009/08/10

2011/07/21

C

9

SMD NPN Transistor