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INA132UA/2K5 Datasheet(PDF) 3 Page - Texas Instruments

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Part # INA132UA/2K5
Description  Low Power, Single-Supply DIFFERENCE AMPLIFIER
PDF  13 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

INA132UA/2K5 Datasheet(HTML) 3 Page - Texas Instruments

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®
INA132
SPECIFICATIONS: VS = +5V
At TA = +25°C, VS = +5V, RL = 10kΩ connected to VS/2, and Reference Pin connected to VS/2, unless otherwise noted.
INA132P, U
INA132PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
OFFSET VOLTAGE(1)
RTO
Initial
±150
±500
V
±750
µV
vs Temperature
±2
V
µV/°C
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
0
2(V+)–2
VV
V
Common-Mode Rejection
VCM = 0V to 8V, RS = 0Ω
76
90
70
V
dB
OUTPUT
Voltage, Positive
RL = 100kΩ
(V+)–1
(V+)–0.75
VV
V
Negative
RL = 100kΩ
+0.25
+0.06
VV
V
Positive
RL = 10kΩ
(V+)–1
(V+)–0.8
VV
V
Negative
RL = 10kΩ
+0.25
+0.12
VV
V
POWER SUPPLY
Rated Voltage
+5
V
V
Voltage Range
+2.7
+36
VV
V
Quiescent Current
IO = 0mA
±155
±185
VV
µA
VSpecifications the same as INA132P.
NOTE: (1) Include effects of amplifier’s input bias and offset currents.
PIN CONFIGURATION
TOP VIEW
DIP/SOIC
Ref
–In
+In
V–
No Internal Connection
V+
Output
Sense
1
2
3
4
8
7
6
5
Supply Voltage, V+ to V– .................................................................... 36V
Input Voltage Range ..........................................................................
±80V
Output Short-Circuit (to ground) .............................................. Continuous
Operating Temperature ................................................. –55
°C to +125°C
Storage Temperature ..................................................... –55
°C to +125°C
Junction Temperature .................................................................... +150
°C
Lead Temperature (soldering, 10s) ............................................... +300
°C
ABSOLUTE MAXIMUM RATINGS
ORDERING INFORMATION
PACKAGE
DRAWING
TEMPERATURE
PRODUCT
PACKAGE
NUMBER(1)
RANGE
INA132PA
8-Pin Plastic DIP
006
–40
°C to +85°C
INA132P
8-Pin Plastic DIP
006
–40
°C to +85°C
INA132UA
SO-8 Surface-Mount
182
–40
°C to +85°C
INA132U
SO-8 Surface-Mount
182
–40
°C to +85°C
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with ap-
propriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.



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