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US1MB Datasheet(PDF) 1 Page - SUNMATE electronic Co., LTD |
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US1MB Datasheet(HTML) 1 Page - SUNMATE electronic Co., LTD |
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1 / 2 page ![]() US1AB - US1MB VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A SURFACE MOUNT ULTAFAST RECTIFIER DIODES Features Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss Ideally Suited for Automated Assembly Plastic Material: UL Flammability Classification Rating 94V-0 Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%. SMB(DO-214AA) Dim Min Max A B C 1.91 2.21 D 0.15 0.31 E 5.00 5.59 G 0.10 0.20 H 0.76 1.52 J 2.00 2.62 All Dimensions in mm A B C D G H E J 3.30 3.94 4.06 4.70 A B C D G H E J ! ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Mechanical Data Case: SMB/DO-214AA, Molded Plastic Weight: 0.093 grams (approx.) ! ! ! ! ! ! Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current @ TT = 75 °C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) IFSM 30 A Forward Voltage Drop @ IF = 1.0A VFM 1.0 1.3 1.7 V Peak Reverse Current @ TA = 25 °C at Rated DC Blocking Voltage @ TA = 100 °C IRM 5.0 100 mA Reverse Recovery Time (Note 2) trr 50 75 ns Typical Junction Capacitance (Note 1) Cj 20 10 pF Typical Thermal Resistance, Junction to Terminal RqJT 30 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Characteristic Symbol US1AB US1BB US1DB US1GB US1JB US1KB US1MB Unit 1 of 2 www.sunmate.tw |
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