1

2

10.2± 0.2

0.8± 0.1

5.0± 0.5

1.4± 0.2

4.5± 0.2

0.4± 0.1

PIN

1.3± 0.1

1

3

2

3

4

0.1± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

)

voltage

)

(Note 1)

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

30

35

40

45

50

60

20

150

21

25

28

32

35

42

30

35

40

45

50

60

VOLTAGE RANGE: 30 - 60 V

CURRENT: 20 A

Metal silicon junction, m ajority carrier conduction.

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 150

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.1

0.15

2.0

MBRB2030CT---MBRB2060CT

MBRB

MBRB

MBRB

MBRB

MBRB

MBRB

2030CT

2035CT

2040CT

2045CT

2050CT

2060CT

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.087 ounces,2.2 grams

15

150

V

-

0.57

0.80

0.70

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

)

0.84

0.95

0.72

0.85

Diode Semiconductor Korea

www.diode.kr