ZHCS506Q datasheet(2/5 Pages) DIODES

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ZHCS506Q

Document number: DS38913 Rev. 1 - 2

2 of 5

www.diodes.com

May 2016

ZHCS506Q

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Continuous Reverse Voltage

VRRM

Continuous Forward Current

500

Forward Voltage @IF =500mA

630

Average Peak Forward Current; D.C. = 50%

IFAV

1000

Non Repetitive Forward Current

100µs

IFSM

5.5

10ms

2.5

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation, TA = +25°C

330

Junction Temperature

+125

°C

Storage Temperature Range

TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage

V(BR)R

—

IR = 200A

Forward Voltage (Note 6)

—

275

310

IF = 50mA

—

320

360

IF = 100mA

—

415

470

IF = 250mA

—

550

630

IF = 500mA

—

680

800

IF = 750mA

—

820

960

IF = 1A

—

1120

1350

IF = 1.5A

—

565

—

IF = 500mA, TA = +100°C

Reverse Current

—

μA

VR = 45V

Diode Capacitance

—

f = 1MHz, VR = 25V

Reverse Recovery Time

tRR

—

Switched from IF = 500mA to

IR = 500mA

Measured @ IR = 50mA

Note:

6. Measured

under pulsed conditions. Pulse width = 300μS. Duty cycle 2%.

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