2015. 9. 01

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SEMICONDUCTOR

TECHNICAL DATA

TMBRF40100CT

SCHOTTKY BARRIER TYPE DIODE

Revision No : 0

SWITCHING MODE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

FEATURES

・Average Output Rectified Current

・Repetitive Peak Reverse Voltage

・Low Forward Voltage

・Low Reverse Current

MAXIMUM RATING (Ta=25℃)

TO-220IS (1)

A

A

B

C

C

D

D

E

E

F

G

H

H

1.47 MAX

1.47 MAX

J

K

L

M

L

N

NN

O

Q

1. ANODE

2. CATHODE

3. ANODE

R

R

12

3

M

DIM MILLIMETERS

10.16 0.2

+_

15.87 0.2

+_

2.54 0.2

+_

0.8 0.1

+_

3.18 0.1

+_

0.5 0.1

+_

3.23 0.1

+_

13.0 0.5

+_

2.54 0.2

+_

4.7 0.2

+_

6.68 0.2

+_

2.76 0.2

+_

3.3 0.1

+_

12.57 0.2

+_

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak Reverse Voltage

100

V

Average Output Rectified

Current

(Note)

40

A

Peak One Cycle Surge Forward

Current (Non-Repetitive 60Hz)

200

A

Junction Temperature

-40～150

℃

Storage Temperature Range

-55～150

℃

Note : average forward current of centertap full wave connection

Note : A value of one cell

3

1

2

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Peak Forward Voltage

(Note)

-

0.42

-

V

-

0.54

-

-

0.64

0.70

Repetitive Peak

Reverse Current

(Note)

-

20

200

μA

Junction Capacitance

(Note)

-

1.0

-

nF

Thermal Resistance

(Note)

Junction to Case

-

-

3

℃/W