AMCC431P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AMCC431_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

P-Channel 30-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

DFN3x3-8PP saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

-5.9

-4.8

PRODUCT SUMMARY

-30

Symbol Maximum Units

-30

±20

o

C

-5.9

o

C

-4.8

±50

-2.1

A

o

C

3.1

o

C

2.0

-55 to 150

o

C

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Symbol

Maximum

Units

t <=10 sec

35

o

C/W

Steady State

81

o

C/W

THERMALRESISTANCERATINGS

Parameter

MaximumJunction-to-Ambient

a

S

S

S

G

1

2

3

4

DFN3x3

Top View

D

D

D

D

8

7

6

5

S

D

G

P-Channel

MOSFET