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AMIFB7540 Datasheet(PDF) 1 Page - Analog Power |
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AMIFB7540 Datasheet(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() Analog Power AMIFB7540 N-Channel 60-V (D-S) MOSFET VDS (V) ID (A) Symbol Limit Units VDS 60 VGS ±20 Continuous Drain Current a TC=25°C ID 110 IDM 430 TC=25°C IS 110 A Power Dissipation a TC=25°C PD 300 W TJ, Tstg -55 to 175 °C Symbol Maximum Units RθJA 62.5 RθJC 0.5 Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. Continuous Source Current (Diode Conduction) a Gate-Source Voltage PRODUCT SUMMARY 60 rDS(on) (mΩ) 5.1 @ VGS = 10V 7.5 @ VGS = 6.5V 110 a Pulsed Drain Current b THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A Maximum Junction-to-Ambient c Maximum Junction-to-Case Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Automotive Systems • DC/DC Conversion Circuits • Battery Powered Power Tools DRAIN connected to TAB © Preliminary 1 Publication Order Number: DS_AMIFB7540_1B |
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