ESDA6V1W5 datasheet(4/7 Pages) STMICROELECTRONICS

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100

125

150

IR[Tj] / IR[Tj=25°C]

Tj(°C)

Fig. 5 : Relative variation of leakage current

versus junction temperature (typical values).

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1E-3

1E-2

1E-1

1E+0

IFM(A)

Tj=25°C

VFM(V)

Fig. 6 : Peak forward voltage drop versus peak

forward current (typical values).

0.1

1.0

10.0

50.0

Ipp(A)

tp=2.5µs

Vcl(V)

Fig. 3 : Clamping voltage versus peak pulse

current (Tj initial = 25 °C).

Rectangular waveform tp = 2.5

µs.

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

C(pF)

F=1MHz

Vosc=30mV

VR(V)

Fig. 4 : Capacitance versus reverse applied

voltage (typical values).

100

125

150

175

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ppp[Tj initial]/Ppp[Tj initial=25°C]

Tj initial(°C)

Fig. 1 : Peak power dissipation versus initial

junction temperature

100

1000

Ppp(W)

tp(µs)

Fig. 2 : Peak pulse power versus exponential

pulse duration (Tj initial = 25 °C)

ESDA6V1W5

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