MMST5401 datasheet(1/2 Pages) HOTTECH

Part #	MMST5401

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial planar die construction.

Complementary PNP type available(MMST5551).

Also available in lead free version.

Marking:K4M

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-160

V

Collector-Emitter Voltage

V

CEO

-150

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

600

mA

Collector Power Dissipation

PC

200

mW

Thermal resistance junction to ambient

RθJA

625

°C/W

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min.

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-100μA,IE=0

-160

Collector-emitter breakdown voltage

VCEO

IC=-1mA,IB=0

-150

Emitter-base breakdown voltage

VEBO

IE=-10μA,IC=0

-5

Collector cut-off current

ICBO

IE=0;VCB

= -120V

-

-50

nA

Emitter cut-off current

IEBO

IC=0; VEB = -3V

-

-50

nA

DC current gain

hFE

VCE=-5V; IC=-1mA

VCE=-5V;IC=-10mA

VCE=-5V;IC=-50 mA

50

60

50

-2

40

-

Collector-emitter saturation voltage

VCE(sat)

IC=-50 mA; IB=-5mA

IC=-10mA;

IB=-1mA

-

-0.5

-0.2

V

Base-emitter saturation voltage

VBE(sat)

IC=-50mA;IB=-5Ma

IC=-10mA; IB=-1mA

-

-1

V

Transition frequency

fT

IC=-10mA; VCE= -10V, f=100MHz

100

300

MHz

Noise figure

NF

IC=-200mA,VCE=-5.0V, f=100MHz

8

dB

MMST5401 (PNP)

1. BASE

2. EMITTER

SOT-323

3. COLLECTO

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MMST5401 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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