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IRLML6402 Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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IRLML6402 Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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2 / 4 page  Repetitive rating; pulse width limited by Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 29 43 ns TJ = 25°C, IF = -1.0A Qrr Reverse RecoveryCharge ––– 11 17 nC di/dt = -100A/µs max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics -1.3 -22 A S D G Surface mounted on 1" square single layer 1oz. copper FR4 board, steady state. Starting TJ = 25°C, L = 1.65mH RG = 25Ω, IAS = -3.7A. Fig 4. Normalized On-Resistance Vs. Temperature Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics 1 10 100 0.1 1 10 100 20µs PULSE WIDTH T = 25 C J ° TOP BOTTOM VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -V , Drain-to-Source Voltage (V) DS -2.25V 1 10 100 0.1 1 10 100 20µs PULSE WIDTH T = 150 C J ° TOP BOTTOM VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -V , Drain-to-Source Voltage (V) DS -2.25V 10 100 2.0 3.0 4.0 5.0 6.0 7.0 8.0 V = -15V 20µs PULSE WIDTH DS -V , Gate-to-Source Voltage (V) GS T = 25 C J ° T = 150 C J ° -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature ( C) J ° V = I = GS D -4.5V -3.7A Page:P4 -P2 GUANGDONG HOTTECH INDUSTRIAL CO., LTD. Plastic-Encapsulate Mosfets IRLML6402 |
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