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2SA1742 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1742 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1742 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO= -60V(Min) · High DC Current Gain- : hFE= 100(Min)@ (VCE= -2V , IC= -1A) · Low Saturation Voltage- : VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) APPLICATIONS · This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Pulse -12 A IB Base Current-Continuous -2.5 A PT Total Power Dissipation @TC=25℃ 25 W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
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