MMFT2406T3 datasheet(2/4 Pages) ONSEMI

2 / 4 page

MMFT2406T1

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0, ID = 100 mA)

V(BR)DSS

240

−

Vdc

Zero Gate Voltage Drain Current

(VDS = 120 V, VGS = 0)

IDSS

−

mAdc

Gate−Body Leakage Current

(VGS = 15 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th)

0.8

2.0

Vdc

Static Drain−to−Source On−Resistance

(VGS = 2.5 Vdc, ID = 0.1 Adc)

(VGS = 10 Vdc, ID = 0.5 Adc)

RDS(on)

−

6.0

Drain−to−Source On−Voltage

(VGS = 10 V, ID = 0.5 A)

VDS(on)

−

3.0

Vdc

Forward Transconductance

(VDS = 6.0 V, ID = 0.5 A)

gFS

300

−

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

−

125

Output Capacitance

(VDS = 25 V, VGS = 0,

f = 1.0 MHz)

Coss

−

Transfer Capacitance

f = 1.0 MHz)

Crss

−

2. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

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