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4402 Datasheet(PDF) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part # 4402
Description  N-Channel Enhancement Mode MOSFET
PDF  4 Pages
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Manufacturer  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Direct Link  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

4402 Datasheet(HTML) 2 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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Plastic-Encapsulate Mosfets
GUANGDONG
HOTTECH
INDUSTRIAL
CO., LTD.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
30
V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
1
µA
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
0.8
1.2
V
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
60
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A
11.1
14
mΩ
TJ=125°C
16
19.2
VGS=4.5V, ID=10A
13.1
16
mΩ
VGS=2.5V, ID=8A
21
26
mΩ
gFS
Forward Transconductance
VDS=5V, ID=5A
25
50
S
VSD
Diode Forward Voltage
IS=10A,VGS=0V
0.8
1
V
IS
Maximum Body-Diode Continuous Current
4.5
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
1630
pF
Coss
Output Capacitance
201
pF
Crss
Reverse Transfer Capacitance
142
pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
0.8
Ω
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=4.5V, VDS=15V, ID=12A
19
nC
Qgs
Gate Source Charge
3.3
nC
Qgd
Gate Drain Charge
5.2
nC
tD(on)
Turn-On DelayTime
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
3
ns
tr
Turn-On Rise Time
4.7
ns
tD(off)
Turn-Off DelayTime
33.5
ns
tf
Turn-Off Fall Time
6
ns
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=100A/µs
21
ns
Qrr
Body Diode Reverse Recovery Charge
IF=10A, dI/dt=100A/µs
11
nC
4402
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA curve
provides a single pulse rating.



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