GaN Power Amp Pallet

RTP21028-20

Korean Facilities : 82-31-8069-3036 / rfsales@rfhic.com

All specifications may change without notice

US Facility : 919-677-8780 / sales@rfhicusa.com

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Version 1.0

Product Features

Applications

• Doherty amplifier design

• GaN on SiC HEMT

• Small and light weight

• 50 Ohm Input/Output impedance matched

• Highly reliable and rugged design

• High efficiency

• WCDMA & LTE DPD amplifier

• General purpose RF amplifier

Description

The RTP21028-20 is designed for RF system application frequencies from 2110 ~ 2170MHz, with high gain.

This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.

The RTP21028-20 is a DPD application amplifier.

PARAMETER

UNIT

MIN

TYP

MAX

SYMBOL

Frequency Range

MHz

2110

-

2170

Operating Bandwidth

MHz

-

60

-

OBW

Average Output Power

dBm

44

44.5

-

Pout

Peak Output Power

(Pulse duty 10%)

dBm

51.5

52

-

Psat

@ Pout=44.5dBm Avg.

Pre-DPD

dBc

-

-24

-

ACPR

-

-52

-

RF Gain @ 25

℃

dB

43.5

44.5

45.5

Gain Variation

dB

± 3dB @ operating temperature

G

Gain Flatness

dB

-

± 0.5

±1

Input Return Loss

dB

-

-

-12

Output Return Loss

dB

-

-

-17

Operating Voltage

V

VDC

Current Consumption

5.6V

A

-

0.16

0.19

IDD

48V

-

1.32

1.43

Efficiency @ 44.5dBm

%

40

43

-

Eff

Feedback Output level @ 44.5dBm

dBm

5

7

9

FB

Note

1. Signal source condition : LTE 10MHz 1FA, PAPR 7.5dB@0.01% probability on CCDF

2. DPD Solution : Broadcom OP6180