DMC3016LSD datasheet(3/10 Pages) DIODES

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DMC3016LSD

Document Number: DS36935 Rev. 4 - 2

3 of 10

www.diodes.com

December 2015

DMC3016LSD

Electrical Characteristics (Continued) (P-Channel Q2) (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30



VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS



-1

µA

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS



100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.0



-3.0

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS(ON)



VGS = -10V, ID = -7A



VGS = -4.5V, ID = -6.2A

Diode Forward Voltage

VSD



-0.7

-1.2

VGS = 0V, IS = -2.1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS



1,241



VDS = -15V, VGS = 0V

f = 1.0MHz

Output Capacitance

COSS



147



Reverse Transfer Capacitance

CRSS



110



Gate Resistance



Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = -4.5V)



10.9





VDS = -15V, ID = -7A

Total Gate Charge (VGS = -10V)



Gate-Source Charge

QGS



3.5



Gate-Drain Charge

QGD



4.7



Turn-On Delay Time

tD(ON)



9.7



VDS = -15V, ID = -7A

VGS = -10V, RG =6

Ω

Turn-On Rise Time



17.1



Turn-Off Delay Time

tD(OFF)



60.5



Turn-Off Fall Time



40.4



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