BSP15 datasheet(1/1 Pages) ETC

Part #	BSP15

Description	SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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SOT223 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

*High VCEO

* Low saturation voltage

COMPLEMENTARY TYPE: BSP20

PARTMARKING DETAIL:

BSP15

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-200

V

Collector-Emitter Voltage

VCEO

-200

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-1

A

Continuous Collector Current

IC

-0.5

A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V(BR)CBO

-200

V

IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

-200

V

IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO

-5

V

IE=-100µA

Collector Cut-Off

Current

ICBO

-1

µ

A

VCB=-175V

Emitter Cut-Off Current

IEBO

-20

µ

A

VEB=-4V

Collector-Emitter Saturation

Voltage

VCE(sat)

- 2.0

-0.5

V

IC=-50mA, IB=-5mA*

IC=-30mA, IB=-3mA*

Static Forward Current

Transfer Ratio

hFE

30

150

IC=-50mA, VCE=-10V*

Transition Frequency

fT

15

MHz

IC=-10mA, VCE=-20V*

f = 20MHz

Output Capacitance

Cobo

15

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

For typical characteristics graphs see FMMTA92 datasheet.

BSP15

C

E

B

3 - 58

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