Device

V+

OUT

GND

IN-

IN+

C

BYPASS

Shutdown

Control

REF

Reference

Voltage

Supply

Load

R

SHUNT

Output

1 MW

R

PROTECT

10 W

R

PROTECT

10 W

R

3

1 MW

R

4

Device

V+

OUT

GND

IN-

IN+

C

BYPASS

Shutdown

Control

REF

Reference

Voltage

Supply

Load

R

SHUNT

Output

1 MW

R

PROTECT

10 W

R

PROTECT

10 W

R

3

1 MW

R

4

19

INA210, INA211, INA212, INA213, INA214, INA215

www.ti.com

SBOS437I – MAY 2008 – REVISED SEPTEMBER 2016

Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215

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Copyright © 2008–2016, Texas Instruments Incorporated

Figure 27. INA210-INA215 Transient Protection using Dual Zener Diodes

In the event that low-power zeners do not have sufficient transient absorption capability and a higher power

transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-to-

back diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a

single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total

board area required by the INA210-INA215 with all protective components is less than that of an SO-8 package,

and only slightly greater than that of an MSOP-8 package.

Figure 28. INA210-INA215 Transient Protection using a Single Transzorb and Input Clamps