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MBRF1035C Datasheet(PDF) 1 Page - Mospec Semiconductor

Part # MBRF1035C
Description  Full Plastic Dual Schottky Barrier Power Rectifiers
PDF  2 Pages
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Manufacturer  MOSPEC [Mospec Semiconductor]
Direct Link  http://www.mospec.com.tw
Logo MOSPEC - Mospec Semiconductor

MBRF1035C Datasheet(HTML) 1 Page - Mospec Semiconductor

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MOSPEC
MBRF1030C Thru MBRF1060C
Switchmode
Full Plastic Dual Schottky Barrier Power Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal. These
state-of-the-art geometry features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes.
Features
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 175℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
Mecnanical Data
*
Case :JEDEC ITO-220AB molded plastic body
*
Termals:Plated lead,solderable per MIL-STD-750, Method 2026
*
Polarity:As marked
*
Mounting Torqure: 5 in-lbs. max
*
Weight:1.7 g approx.
*
High temperature soldering guaranteed 260℃/10 seconds
*In compliance with EU RoHs 2002/95/EC directives
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
MAXIMUM RATINGS
MBRF10
Characteristic
Symbol
30C
35C
40C
45C
50C
60C
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
50
60
V
RMS Reverse Voltage
VR(RMS)
21
25
28
32
35
42
V
Average Rectifier Forward Current
Total Device (Rated VR),TC=100℃
IF(AV)
5.0
10
A
Peak Repetitive Forward Current
(Rate VR, Square Wave, 20kHz)
IFM
10
A
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
halfware, single phase, 60Hz)
IFSM
100
A
Operating and Storage Junction
Temperature Range
TJ , TSTG
-65 to +175
℃
30-60 VOLTS
ITO-220AB
MILLIMETERS
DIM
MIN
MAX
A
14.90
15.15
B
13.35
13.55
C
10.00
10.10
D
6.55
6.65
E
2.65
2.75
F
1.55
1.65
G
1.15
1.25
H
0.55
0.65
I
2.50
2.60
J
3.00
3.20
K
1.10
1.20
L
0.55
0.65
M
4.40
4.60
N
1.15
1.25
O
3.35
3.45
P
2.65
2.75
Q
3.15
3.25
ELECTRIAL CHARACTERISTICS
MBRF10
Characteristic
Symbol
30C
35C
40C
45C
50C
60C
Unit
Maximum Instantaneous Forward Voltage
( IF =5 Amp TC = 25℃)
( IF =5 Amp TC = 125℃)
VF
0.65
0.56
0.75
0.65
V
Maximum Instantaneous Reverse Current
( Rated DC Voltage, TC = 25℃)
( Rated DC Voltage, TC = 125℃)
IR
0.01
20
mA
Typical Thermal Resistance junction to
case
Rθ jc
2.8
℃
/w


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