MSP0625D datasheet(1/6 Pages) MORESEMI

Part #	MSP0625D

Description	-60V(D-S) P-Channel Enhancement Mode Power MOS FET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	MORESEMI [MORE Semiconductor Company Limited]

Direct Link	http://www.moresemi.com/

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1 / 6 page

General Features

● VDS =-60V,ID =-25A

RDS(ON) <45mΩ @ VGS=-10V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● High side switch for full bridge converter

● DC/DC converter for LCD display

Schematic diagram

Marking and pin assignment

TO-252 -2Ltop view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSP0625D

TO-252-2L

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-25

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

-17.7

A

Pulsed Drain Current

IDM

-60

A

Maximum Power Dissipation

PD

90

W

Derating factor

0.72

W/℃

Single pulse avalanche energy

(Note 5)

EAS

300

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

MSP0625D

-60V(D-S) P-Channel Enhancement Mode Power MOS FET

Lead Free

PIN Configuration

MSP0625D

MORE Semiconductor Company Limited

http://www.moresemi.com

1/6

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