PBSS2540F datasheet(4/8 Pages) PHILIPS

4 / 8 page

2001 Oct 31

Philips Semiconductors

Product speciﬁcation

40 V low VCEsat NPN transistor

PBSS2540F

handbook, halfpage

400

800

1200

200

600

1000

MHC082

10−1

hFE

IC (mA)

102

103

(1)

(2)

(3)

Fig.2

DC current gain as a function of collector

current; typical values.

VCE =2V.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MHC085

10−1

110

VBE

(mV)

IC (mA)

102

103

(1)

(2)

(3)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

VCE =2V.

(1) Tamb = −55 °C.

(2) Tamb =25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

103

102

MHC086

10−1

110

VCEsat

(mV)

IC (mA)

102

103

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

200

1200

400

600

800

1000

MHC084

10−1

110

VBEsat

(mV)

IC (mA)

102

103

(1)

(2)

(3)

Fig.5

Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −55 °C.

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