CJD4435 datasheet(2/2 Pages) ZPSEMI

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Electrical characteristics ( Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-30

Gate-source threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-1

-3

Gate-source leakage

IGSS

VDS =0V, VGS =±20V

±100

Zero gate voltage drain current

IDSS

VDS =-30V, VGS =0V

-1

µA

VGS =-10V, ID =-9.1A

0.024

Drain-source on-state resistance

(note 3)

RDS(on)

VGS =-4.5V, ID =-6.9A

0.035

Ω

Forward transconductance (note 3)

gfs

VDS =-10V, ID =-9.1A

Dynamic (note 4)

Input capacitance

Ciss

1350

Output capacitance

Coss

215

Reverse transfer capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

185

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

VDD=-15V,

RL=15Ω, ID≈-1A,

VGEN=-10V,RG=1Ω

Gate Resistance

f =1MHz

5.8

Ω

Drain-source Body diode characteristics

Body diode voltage

VSD

IS=-2A, VGS =0

-1.2

Notes :

1. This test is performed with no heat sink at T

a=25

℃.

2. This test is performed with inifite heat sink at T

c=25

℃.

3. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%.

4. Guaranteed by design, not subject to production testing.

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