CJMP06 datasheet(2/3 Pages) ZPSEMI

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MOSFET ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

On/Off Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-20

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-1

Gate-body leakage current

IGSS

VDS =0V, VGS =±8V

±100

Zero gate voltage drain current

IDSS

VDS =-20V, VGS =0V

-1

µA

VGS =-4.5V, ID =-2.8A

110

Drain-source on-state resistance (note 1)

RDS(on)

VGS =-2.5V, ID =-2.0A

150

mΩ

Forward transconductance (note 1)

VDS =-10V, ID =-2.7A

5.5

Charges , Capacitances and Gate resistance

Input capacitance (note 2)

Ciss

480

Output capacitance (note 2)

Coss

Reverse transfer capacitance (note 2)

Crss

VDS =-15V,VGS =0V,f =1MHz

Total gate charge

7.2

Gate-source charge

Qgs

2.2

Gate-drain charge

Qgd

VDS =-6V,VGS =-4.5V,ID =-2.8A

1.2

Switching times (note2)

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

VDS=-6V, RL=6Ω,

VGS=-4.5V,RGEN=6Ω

Source-drain diode characteristics

Forward on voltage (note1)

VSD

VGS =0V, IS=-1A

-1.4

Notes:

1. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.

2. These parameters have no way to verify.

SCHOTTKY DIODE MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

DC blocking voltage

Average rectified forward current

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

IF =0.1A

0.4

IF =0.5A

0.5

Forward voltage

IF =1A

0.575

VR =20

Reverse current

VR =10

µA

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CJMP06

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