2N5481

NPN UHF Power Amplifier Transistor 

© 2013 American Microsemiconductor, Inc. 

Specifications are subject to change without notice. 

Aerospace Mgmt. Sys. Cert.  

AS/EN/JISQ9100:2009 Rev. C 

ISO9001:2008 

Cert No. 45325 

133 Kings Road,  

Madison, New Jersey  07940 

United States of America 

Tel. 1-­‐973-­‐377-­‐9566,   Fax. 1-­‐973-­‐377-­‐3078 

Document Page 1 of 1 

Revised 06/2013 

 

Description

Sym.

Min

Max

Unit

Emitter To Base Voltage

3.5

V

Collector to Emitter Voltage

30

V

55

Collector Cutoff Current

1.0

mA

DC Current Gain

20

150

High Frequency Current Gain

3.2

Output Capacitance

1.8

2.5

pF

Power Output (Collector Eff. 25% Min.)

1.0

W

in Vendor's Test Circuit

Noise Figure

NF

5.0

dB

RF Power Gain

15

dB

 

 

 

§

Hermetically sealed ceramic-

metal stud stripline package.

FEATURES 

MAXIMUM RATINGS 

ELECTRICAL CHARACTERISTICS ( @ 25°C UNLESS OTHERWISE SPECIFIED) 

Description

Sym.

Value

Unit

Collector-to-Base Voltage:

55

V

Collector-to-Emitter Voltage:

30

V

Emitter-to-Base Voltage:

3.5

V

Collector Current:

200

mA

Power Dissipation @ 25°C Stud Temp.:

5

W

Thermal Resistance (Junction-to-stud):

35

°C/W

Operating Junction Temperature:

-65 to +200

°C

Storage Temperature:

-65 to +200

°C

Stud Torque:

7

IN-LBS.

IMAGE SERVES AS A REPRESENTATION ONLY

DRAWING (TOP/SIDE)