CJB08N65 datasheet(2/2 Pages) ZPSEMI

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Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

650

Drain-source diode forward voltage

VSD

VGS = 0V, IS =8A

1.4

Zero gate voltage drain current

IDSS

VDS =650V, VGS =0V

µA

Gate-body leakage current

IGSS

VDS =0V, VGS =±30V

100

On characteristics (note2)

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =250µA

2.0

4.0

Static drain-source on-resistance

RDS(on)

VGS =

10V, ID =4A

1.0

1.4

Ω

Forward transconductance

gfs

VDS =50V, ID =3.9A

8.5

Dynamic characteristics (note 3)

Input capacitance

Ciss

1255

Output capacitance

Coss

135

Reverse transfer capacitance

Crss

VDS =25V,VGS =0V,f =1MHz

Switching characteristics (note 3)

Total gate charge

Gate-source charge

Qgs

4.5

Gate-drain charge

Qgd

VDS =520V,VGS =10V,ID =8A

Turn-on delay time

td(on)

Turn-on rise time

130

Turn-off delay time

td(off)

170

Turn-off fall time

VDD=325V, RG=25Ω, ID =8A

140

Notes :

L=7mH, IL=8A, VDD=50V, RG=25Ω, Starting TJ=25

℃.

Pulse Test: Pulse width≤300µs, duty cycle ≤2%.

These parameters have no way to verify.

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