TO-252-2L datasheet(2/2 Pages) ZPSEMI

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ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

V(BR) DSS

VGS = 0V, ID =250µA

600

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =250µA

2.0

4.0

Gate-Body Leakage Current (note 4)

IGSS

VDS =0V, VGS =±30V

±100

Zero Gate Voltage Drain Current

IDSS

VDS =600V, VGS =0V

µA

Drain-Source On-State Resistance

RDS(on)

VGS =10V, ID =2.25A

2.5

Ω

Forward tranconductance (note 4)

gFS

VDS =40V, ID =2.25A

2.9

Input Capacitance

Ciss

670

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS =25V,VGS =0V,

f =1MHz

8.5

Turn-On Delay Time (note 4)

Td(on)

Rise Time (note 4)

Turn-Off Delay Time (note 4)

Td(off)

Fall Time (note 4)

VDD=300V,ID=4.5A,

RG=25Ω

100

Forward on Voltage (note 4)

VSD

VGS =0V, IS=4.5A

1.4

Notes:

EAS condition: Tj=25

℃ , VDD=50V,RG=25Ω,L=16mH,IAS=5A.

This test is performed with no heat sink at Ta=25

℃.

This test is performed with infinite heat sink at Tc=25

℃.

Pulse Test : Pulse Width≤300µs, Duty Cycle ≤2%.

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