BZB784 datasheet(2/8 Pages) PHILIPS

2 / 8 page

2001 Feb 27

Philips Semiconductors

Product speciﬁcation

Voltage regulator double diodes

BZB784 series

FEATURES

• Total power dissipation: max. 350 mW

• Approx. 5% VZ tolerance

• Working voltage range: nom. 2.4 to 15 V (E24 range).

APPLICATIONS

• General regulation functions

• ESD and surge protection.

DESCRIPTION

Low-power voltage regulator diodes in a small SOT323

(SC-70) package.

PINNING SOT323 (SC-70)

DESCRIPTION

cathode

common anode

handbook, halfpage

Top view

MAM407

Fig.1 Simplified outline and symbol.

MARKING

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted on an FR4 printed-circuit board.

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BZB784-C2V4

BZB784-C3V9

BZB784-C6V2

BZB784-C10

BZB784-C2V7

BZB784-C4V3

BZB784-C6V8

BZB784-C11

BZB784-C3V0

BZB784-C4V7

BZB784-C7V5

BZB784-C12

BZB784-C3V3

BZB784-C5V1

BZB784-C8V2

BZB784-C13

BZB784-C3V6

BZB784-C5V6

BZB784-C9V1

BZB784-C15

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

continuous forward current

−

200

IZSM

non-repetitive peak reverse current

tp = 100 µs; square wave;

Tamb =25 °C; prior to surge

see Table 1

Ptot

total power dissipation; note 1

Tamb =25 °C; 2 diodes loaded

−

350

Tamb =25 °C; 1 diode loaded

−

180

PZSM

non-repetitive peak reverse

dissipation

tp = 100 µs; square wave;

Tamb =25 °C; prior to surge

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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