LM1558HSLASH883 datasheet(3/6 Pages) NSC

3 / 6 page

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

(Note 5)

Supply Voltage

LM1558

±22V

LM1458

±18V

Power Dissipation (Note 2)

LM1558H/LM1458H

500 mW

LM1458N

400 mW

Differential Input Voltage

±30V

Input Voltage (Note 3)

±15V

Output Short-Circuit Duration

Continuous

Operating Temperature Range

LM1558

LM1458

−55˚C to +125˚C

0˚C to +70˚C

Storage Temperature Range

−65˚C to +150˚C

Lead Temperature (Soldering, 10 sec.)

260˚C

Soldering Information

Dual-In-Line Package

Soldering (10 seconds)

260˚C

Small Outline Package

Vapor Phase (60 seconds)

215˚C

Infrared (15 seconds)

220˚C

See AN-450 “Surface Mounting Methods and Their Effect

on Product Reliability” for other methods of soldering

surface mount devices.

ESD tolerance (Note 6)

300V

Electrical Characteristics (Note 4)

Parameter

Conditions

LM1558

LM1458

Units

Min

Typ

Max

Min

Typ

Max

Input Offset Voltage

A = 25˚C, RS ≤ 10 kΩ

1.0

5.0

1.0

6.0

Input Offset Current

A = 25˚C

200

Input Bias Current

A = 25˚C

200

500

200

500

Input Resistance

A = 25˚C

0.3

1.0

0.3

1.0

Ω

Supply Current Both

A = 25˚C, VS = ±15V

3.0

5.0

3.0

5.6

Amplifiers

Large Signal Voltage Gain

A = 25˚C, VS = ±15V

160

V/mV

OUT = ±10V, RL ≥ 2kΩ

Input Offset Voltage

S ≤ 10 kΩ

6.0

7.5

Input Offset Current

500

300

Input Bias Current

1.5

0.8

µA

Large Signal Voltage Gain

S = ±15V, VOUT = ±10V

V/mV

L ≥ kΩ

Output Voltage Swing

S = ±15V, RL = 10 kΩ

±12

±14

±12

±14

L = 2kΩ

±10

±13

±10

±13

Input Voltage Range

S = ±15V

±12

Common Mode

S ≤ 10 kΩ

Rejection Ratio

Supply Voltage

S ≤ 10 kΩ

Rejection Ratio

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

functional, but do not guarantee specific performance limits.

Note 2: The maximum junction temperature of the LM1558 is 150˚C, while that of the LM1458 is 100˚C. For operating at elevated temperatures, devices in the H08

package must be derated based on a thermal resistance of 150˚C/W, junction to ambient or 20˚C/W, junction to case. For the DIP the device must be derated based

on a thermal resistance of 187˚C/W, junction to ambient.

Note 3: For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.

Note 4: These specifications apply for VS = ±15V and −55˚C ≤ TA ≤ 125˚C, unless otherwise specified. With the LM1458, however, all specifications are limited to

0˚C

≤ TA ≤ 70˚C and VS = ±15V.

Note 5: Refer to RETS 1558V for LM1558J and LM1558H military specifications.

Note 6: Human body model, 1.5 k

Ω in series with 100 pF.

LM1558H/883 Datasheet(PDF) 3 Page - National Semiconductor (TI)

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