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BUR52 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUR52
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUR52 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUR52 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUR52 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BUR52
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 250V(Min)
·
High Current Capability
·
Low Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 25A
APPLICATIONS
·
Designed for switching and linear applications in military
and industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.5
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350
V
VCEO(SUS)
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
60
A
ICM
Collector Current-Peak
80
A
IB
Base Current-Continuous
16
A
PC
Collector Power Dissipation
@TC=100℃
350
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃


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